Description

A method of forming boron carbo-nitride layer for use as a barrier and etch stop layer in copper interconnect structures used in integrated circuit manufacturing has been developed. The boron carbo-nitride films are deposited by a thermal chemical vapor deposition (CVD) process at temperatures below 450° Celsius to minimize thermal exposure of substrate. The films are deposited conformally on interconnect structures and offer desirable electrical properties with a dielectric constant less than 4.

Benefits

This invention solves the problem of reducing the capacitance associated with interconnect insulating films by offering a lower dielectric constant material and eliminating substrate damage associated with plasma-enhanced CVD technologies.

Features

• Films with dielectric constant less than 4 can be deposited using thermal CVD at low temperatures (less than 450°C), whereas the state-of-the-art uses plasma enhanced CVD.
  
• A thermal CVD route offers the opportunity for more conformally deposited films and does not cause substrate damage that is associated with a plasma enhanced process.

For further information please contact:

University of Texas,
Austin, USA
Website : www.otc.utexas.edu