Nano technologies -P-doped Quantum Dots for Optoelectronic
Devices
Introduction
The invention covers the introduction
of p-type impurities into the active material of III-V
nanostructures called quantum dots (QDs) for the purpose
of improving optoelectronic device performance. The
new discovery is that closely spaced (in energy) discrete
electronic levels connected to the valence band of the
III-V semiconductor but associated with the nanostructure
limit laser performance, and that this limitation is
removed by the introduction of certain level of p-type
impurities into barrier layers around the QDs, so that
excess holes created by these impurities are captured
within the QDs.
Invention Description
This invention introduces a precise
level of p-type impurities in the QD barrier layers
to fill their discrete valence levels with an excess
of equilibrium holes. The introduction of p-type impurities
into the QD barrier layers are presently not used in
these lasers.
Benefits
Large increase in the optical gain
for a given injection current
Large increase in the differential
gain to improve modulation speed of the laser
Market Potential/Applications
Any optolectronic device based on
QDs for optical gain, such as switches and optical amplifiers
IP Status
One U.S. Patent Issued.
UT Researcher
Dennis G. Deppe, Ph.D., Department
of Electrical and Computer Engineering, The University
of Texas at Austin
Oleg B. Shchekin, Department of Electrical and Computer
Engineering, The University of Texas at Austin
