Chemicals Based
Technologies - Ultra-Purification of Gallium
Introduction
Ultrapure gallium
(7N) finds extensive application in electronics industry
as III-V compound semiconductors and as a dopant. Gallium
(7N pure) at present is not manufactured in India and
needs import. BARC has standardized a protocol for producing
7N (99.99999%) pure gallium from commercially available
metal (99.3%). The product quality obtained is equal
to or better than imported. The process has been developed
at a scale of 2.5 kg/batch and can be scaled up as required.
Most of the ultrapure Gallium is imported
at present. Gallium is obtained essentially as a by-product
of aluminium and zinc industry. India has a well established
aluminium industry which produces tones of commercial
gallium as byproduct. In view of this, sufficient raw
material is available indigenously for ultra-purification.
Standardization of protocol by BARC may significantly
reduce imports of ultra-pure gallium.
Ultrapurification of gallium
Main impurities present in commercial
gallium are aluminum, silver, arsenic, bismuth, cadmium,
cobalt, chromium, copper, iron, mercury, manganese,
molybdenum, nickel, lead, tin, antimony, selenium, zinc
and vanadium.
Purification of Gallium is carried out in clean rooms
in three steps as described below to bring impurities
down to ppb level.
1. Commercial gallium is heated at
high temperature under dynamic vacuum (10-4 torr) to
remove volatile impurities.
2. The gallium obtained (from step 1) is converted to
sodium gallate solution after a series of chemical treatments
to remove the gross impurities.
3. The sodium gallate solution on electro-winning with
stainless steel electrodes yields ultra-pure 6N gallium
(99.99999%).
The ultra-pure gallium is then sealed
in high purity teflon bottles under argon to avoid contamination
due to oxidation.
Analysis of Gallium ( >6N pure)
Analysis of purified gallium has been
carried out by accredited national and international
laboratories.
Applications of pure Gallium
Ultrapure Gallium is used in the manufacture
of semiconductor materials such as GaAs, GaN, GaP, InGaAs,
etc. which are used in high speed opto-electronic devices
(light emitting diodes, Laser diodes, photovoltaics,
etc.). It is also used as a dopant.
Infrastuctural Requirements
A. Clean room area (Class 10000) 15ft
(w) x 15ft (I)
B. Clean benches (Class 100 - 3 nos.)
C. Fume hood (1 no.)
D. Skilled Man Power: B.Sc. (chemistry) graduate from
a recognized university (2 nos.).
For further information please contact
:
Head,
Technology Transfer & Collaboration Division,
Bhabha Atomic Research Centre, Trombay,
Mumbai - 400 085
Tel : 091-022-25505337/25593897
Fax : 091-022-25505151
E-mail : headttcd@barc.gov.in